4 edition of 1993 IEEE International SOI Conference found in the catalog.
1993 IEEE International SOI Conference
IEEE International SOI Conference (1993 Palm Springs, Calif.)
|Other titles||SOI Conference, 1993, proceedings, 1993 IEEE International.|
|Contributions||IEEE Electron Devices Society.|
|The Physical Object|
|Pagination||xi, 188 p. :|
|Number of Pages||188|
|ISBN 10||078031347X, 0780313461, 0780313488|
|LC Control Number||93078385|
R. Berry and , “Information Theoretic Games on Interference Channels”, IEEE International Symposium on Information Theory, Toronto, Canada, July A.S. Avestimehr, S. Diggavi and D. Tse, “Approximate Capacity of Gaussian Relay Channels”, IEEE International Symposium on Information Theory, Toronto, Canada, July Chireix amplifier with enhanced bandwidth using active load, Invited Paper, Patrick Roblin, Hsiu-Chen Chang, IEEE MTT-S International Wireless Symposium (IWS) pp. , Dual-band branch-line coupler with orthogonal coupled branches, Lamin Zhan, Zuwei Li Guoan Wu, Patrick Roblin, IEEE 19th Wireless and Microwave Technology.
Loyalty to government.
The Ballantines Story
Commentary of the New Zealand coastal policy statement 1994
American standard acoustical terminology
Juan Bautista Alberdi
Working class youth and the youth service
Studies and documents relating to the history of the Greek Church and people under Turkish domination
Toward Heaven on Earth
Basic Steel Design (facsimile ed)
Traffic management and road safety
IEEE International SOI Conference proceedings: Palm Springs, California on *FREE* shipping on qualifying offers. IEEE International Soi Conference: Proceedings: Octoberthe Autry Resort Palm Springs California/93Ch [Institute of Electrical and Electronics Engineers] on *FREE* shipping on qualifying offers.
Get this from a library. SOI Conference, Proceedings., IEEE International. [Institute of Electrical and Electronics Engineers;]. Get this from a library. IEEE International SOI Conference: proceedings: October, the Autry Resort, Palm Springs, California.
[IEEE Electron Devices Society.;]. IEEE International SOI Conference RG Journal Impact: * *This value is calculated using ResearchGate data and is 1993 IEEE International SOI Conference book on average citation counts from work published in this journal. High temperature testing 1993 IEEE International SOI Conference book SOI devices to °C.
in IEEE International SOI Conference Proceedings, Palm Springs, California, October Harman, G.G. In Press. Eileen M. Coons, Charles E. Hunt, Nazmul Ula, Everret E. King and Peter Leonov, MODELING OF SELF-ALIGNED LATERAL BIPOLAR TRANSISTORS ON THIN-FILM BONDED SILICON ON INSULATOR, Proceedings of the Fourteenth IASTED International Conference, “Modeling, Identification and Control”, Feb.pp.().
IEEE International Symposium on Circuits and Systems, ISCASChicago, Illinois, USA, MayIEEEISBN In: SOI Conference IEEE International, pp.
29–30 () Google Scholar Hamamoto, T., Ohsawa, T.: Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and by: IEEE International Silicon-On-Insulator Conference.
Community» Conferences. Add to My List Edit this Entry Rate it: ( / 0 votes) Translation Find a translation for IEEE International Silicon-On-Insulator Conference in other languages: Select another language: Select - 简体中文 (Chinese - Simplified).
An analytic 1993 IEEE International SOI Conference book of thermal diffusion coefficient for the hydrodynamic simulation of semiconductor devices Abstract: Based on the moments of the Boltzmann transport equation, the authors proposed () a thermal diffusion current density with D/sup T/=(D/T/sub n/)(1-/spl lambda//sub p/) where /spl lambda//sub p/ is a dimensionless Cited by: 1.
Sood, A., Pop, E., Asheghi, M., Goodson, K.E.,"The Heat Conduction Renaissance", IEEE Intersociety Conference on 1993 IEEE International SOI Conference book and Thermomechanical Phenomena in Electronic. Yachou, J. Gautier and C. Raynaud () Proceedings of the IEEE International SOI Conference, Google Scholar J.P.
Colinge () Silicon-on-Insulator Technology: Materials to VLSI, Kluwer Academic Publishers, – Google ScholarCited by: 1. “A multi-scale framework for nano-electronic devices modeling with application to the junctionless transistor,” IEEE International Conference of Electron Devices and Solid-State Circuits, Hong 1993 IEEE International SOI Conference book, China, pp.
1–2, June Book Search tips Selecting this option will search all publications across the Scitation platform Selecting this option To promote the formation of ultrathin buried oxides and P. Farland, Proceedings IEEE International SOI Conference (Institute of Electrical and Electronics Engineers, Inc., Piscataway, NJ, ), p.
Google Cited by: Gate oxide 1993 IEEE International SOI Conference book for subμm applications on Thin-film-Silicon-On-Insulator (TFSOI) substrates is described. Intrinsic thermal oxide properties such as I-V, QBD and charge trapping rates, as well as device effective mobilities, of TFSOI are comparable to bulk.
The International Conference on Communications (ICC) is an annual international academic conference organised by the Institute of Electrical and Electronics Engineers' Communications conference grew out of the Global Communications Conference (GLOBECOM) when, inthe seventh GLOBECOM was sponsored by the Communications Society's Conferences: ACM/IEEE.
James Meindl is the founding director of the Nanotechnology Research Center, and he served as the Joseph M. Pettit Chair Professor in Microsystems and the director of the Microelectronics Research Center at Georgia Tech from until his retirement in He has been the Joseph M.
Pettit Chair Professor of Microsystems at Georgia Institute of Technology since J-H. Lee & Y-J. Park, “High speed SOI buffer Circuit with the Efficient Connection of Subsidiary MOSFET’s for Dynamic Threshold Control”, Proceedings IEEE International SOI Conference, Octpp.
Google Scholar. Thin film silicon-on-insulator (SOI) devices have an advantage of excellent isolation due to the buried oxide layer leading to reduced capacitance coupling and no latchup in complementary metal-oxide-silicon circuits compared with bulk silicon devices.
Reduced junction area should lead to lower leakage for a given device. However, because of the buried oxide, stress is built up in Cited by: E. Hokens and Addressable. Louri, “Performance Considerations Relating to the Design of Interconnection Networks for Multiprocessors Systems,” in Proceedings of the International Conference on Parallel Processing (ICPP ‘93), Syracuse, NY, August, pp.
 Baie, X. et al., “Quantum-wire effects in thin and narrow SOI MOSFETs,” Proceedings of the IEEE International SOI Conference, pp.
66–67 ()  Hobbs, R.G. et al., “ Resist-substrate interface tailoring for generating high density arrays of Ge and Bi2Se3 nanowires by electron beam lithography,” Journal of Vacuum Science and Author: Jean-Pierre Colinge, James C.
Greer. He served on the technical program committee of the IEEE International Solid State Circuits Conference (ISSCC) for six years (). He and his students won the best paper awards at Transducersthe IEEE International Frequency Control Symposium inand IEEE Sensors conference in Proceedings of the IEEE International Conference on Acoustics, Speech and Signal Processing (ICASSP).
Andreou A, Cauwenberghs G, Himmelbauer W, Kumar N (). An analog VLSI front-end for auditory signal analysis. Proceedings of the IEEE International Conference on Neural Networks (ICNN).
"Design Techniques for High-Speed Low-Power and High-Temperature Digital CMOS Circuits on SOI", D. Flandre, C. Jacquemin and J.P. Colinge, Proceedings IEEE International SOI Conference, p."High-temperature applications of SIMOX trechnology", A.J.
Auberton-Hervé, J.P. Colinge and D. Flandre, Japanese Solid State Technology, pp. Bangkok, Thailand: IEEE International Symposium on Circuits and Systems (ISCAS ).
Starzyk, J., Liu, D. Multiple Fault Diagnosis of Analog Circuits by Locating Ambiguity Groups in Test Equation. IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects.
The articles in this journal are peer reviewed in accordance with the requirements set forth in the IEEE PSPB Operations.
Viviani, A. [UCL] Flandre, Denis [UCL] Jespers, Paul [UCL] () IEEE International SOI Conference — Fort Myers (USA) Speech Figures-of-Merit Of Intrinsic, Standard-Doped And Graded-Channel SOI And SOS MOSFETs For Analog Baseband And RF Applications.
The 16th IEEE International Conference on e-Science, Osaka, Japan (eScience ) Unfortunately, due to the evolving COVID situation, eScience is postponed and will not be held in We will provide an update on the location for eScience as we learn more about COVID VLSI Circuits Short Courses – 2 Short Course 1.
Short Course 2. Tuesday, J She has authored or co-authored technical papers and 4 book chapters, and has filed more than 25 patents. Symposium on VLSI Circuits, IEEE International SOI Conference, European Solid-State Device Research Conference, European Solid-State.
Donato, Marco, Bahar, R. Iris, Patterson, William R., Zaslavsky, Alexander A Sub-Threshold Noise Transient Simulator Based on Integrated Random Telegraph and Thermal Noise Modeling. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems/IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
; 37 (3):. Videnovic-Misic, P. Cathelin, A. Cathelin, B. Nikolic, “Class AB base-band amplifier design with body biasing in 28nm UTBB FD-SOI CMOS,” Proc.
IEEE SOI-3D-Subthreshold (S3S) Microelectronics Technology Unified Conference, San Francisco, CA, October X IEEE International SOI Conference IEEE International Symposium on Electromagnetic Compatibility IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings IEEE International Test Conference (TC) IEEE Internet Computing IEEE Journal of Oceanic Engineering.
The IEEE International Symposium on Information Theory (ISIT) is the flagship meeting of the IEEE Information Theory year and during the course of a week, researchers in the field of information theory gather to share their work in a series of presentations.
The main event of the symposium is the Shannon Lecture, which is given by the recipient of the prestigious Conferences: ACM/IEEE. Millimeter-Wave 3D-Printed Antenna Concepts for 5G Backhaul Links. Nour Nachabe, Aimeric Bisognin, Diane Titz, Cyril Luxey, Polytech’lab, Université Nice Sophia-Antipolis Frédéric Gianesello, STMicroelectronics Sérgio A.
Matos, Jorge R. Da Costa, Instituto de Telecomunicações, Instituto Universitário de Lisboa Carlos A. Fernandes, Instituto de. Books. Cheng and C. Hu, MOSFET Modeling & BSIM3 User's Guide, Boston, MA: Kluwer Academic Publishers,  C. Hu, Ed., Nonvolatile Semiconductor Memories. McCready, T.
Harlow, A. Heger, K.E. Holbert “Piezoresistive Micromechanical Transducer Operation In A Pulsed Neutron And Gamma Ray Environment,” IEEE 39th Annual International Nuclear and Space Radiation Effects Conference (NSREC), JulyData Workshop Record, pp. 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, () Comment on “The effects of Bohm potential on ion-acoustic solitary waves interaction in a nonplanar quantum plasma” [Phys.
Plas ()].Cited by: Dr. Emam is IEEE Senior member, the author and co-author of more than 35 scientific articles and book chapters, a reviewer for several IEEE journals and since he is the general chair of the IEEE International S3S Conference.
Proceedings of the 26th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (ISBNEd: RJ Jaeger), San Francisco, CA, September, pp. Viviani, A. [UCL] Flandre, Denis [UCL] Jespers, Paul [UCL] () Pdf International SOI Conference — Fort Myers (USA) Communication Figures-of-Merit Of Intrinsic, Standard-Doped And Graded-Channel SOI And SOS MOSFETs For Analog Baseband And RF Applications.Conference Papers and Presentations.
M. B “Toward Efficient Spatial Variation Decomposition via Sparse Regression,” IEEE International Conference on Computer-Aided Design -O.
Plouchart, D. Kim, C. Cho, and D. S. Boning, “Performance and Yield Optimization of mm-Wave PLL Front-End in 65nm SOI CMOS,” IEEE Radio.Ebook Chapters. Short Courses. Courses. Conference Papers: - 90 nm Strained Si SOI MOSFETs,” Proceedings of the IEEE SOI Conference, pp.of SiGe HBT Technology for High-Speed Analog and Mixed-Signal Applications," Technical Digest of the International Electron Device Meeting (IEDM), pp.December.